Abstract:When femtosecond laser micromachining center is used to process the microscale structure on silicon wafers,the surface and edge of silicon wafer are needed to be in good condition,and have no defects,such as flaws,stains,scratches and so on.To identify the damaged wafers in advance is of practical significance to guarantee the smooth running of femtosecond laser ablation samples.The silicon wafers ablated by femtosecond laser were used as the experimental samples,and the visual inspection strategies for the following defects were studied respectively:surface scratch detection of silicon wafer,surface stain detection of silicon wafer,edge defects and damage detection of silicon wafer,and the detection for line or curve of silicon wafer edge.The experimental results show that the proposed method is feasible to detect the surface defects of various wafers,and has reference value for improving the quality of femtosecond laser ablated silicon wafers.