The microporous ceramic grinding device was developed,and GC abrasive and C abrasive grinding discs were respectively prepared to grind single crystal α- alumina wafer.The experimental results show that the GC abrasive grinding disc has better grinding effect on single crystal α-alumina wafer than the C abrasive grinding disc;the removal rate of wafer material is 1.05~1.15 μm/min,surface roughness Sa is 15~16 nm after 10 minutes grinding with GC abrasive grinding disc;when grinding 40~50 minutes,the grinding efficiency of GC abrasive grinding disc decreases,and the removal rate of wafer material increases to 1.4~1.5 μm/min,but the surface roughness Sa only increases to 15.5～16.5 nm.Nevertheless,under the premise of ensuring the quality of surface processing,the material removal rate of wafers can still reach the industrial processing standards of more than 1 μm/min.It shows that the developed microporous ceramic grinding device can better meet the grinding requirements of single crystal α-alumina wafers.